Kan-Hao Xue Publication


	Total journal cites excluding self-citation: Total cites on Google Scholar: Pages: [1][2]
	Peer-reviewed journal papers

	79. Jun-Hui Yuan, Li-Heng Li, Wei Zhang, Kan-Hao Xue, Chundong Wang, Jiafu Wang, Xiang-Shui Miao, and Xiao Cheng Zeng, Pt₅Se₄ monolayer: A highly efficient electrocatalyst toward hydrogen and oxygen electrode reactions, ACS Applied Materials and Interfaces 12, 13896 (2020). Available operations: Cited by: On Google:

	78. Xiao-Di Huang, Yi Li, Hao-Yang Li, Kan-Hao Xue*, Xingsheng Wang, and Xiang-Shui Miao, Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlO_x/Al₂O₃/Pt bilayer memristor, IEEE Electron Device Letters 41, 549 (2020). Available operations: Cited by: On Google:

	77. Yuan Qin, Liheng Li, Xiaolong Zhao, Gary S. Tompa, Hang Dong, Guangzhong Jian, Qiming He, Pengju Tan, Xiaohu Hou, Zhongfang Zhang, Shunjie Yu, Haiding Sun, Guangwei Xu, Xiangshui Miao, Kanhao Xue, Shibing Long*, and Ming Liu, Metal–semiconductor–metal ε-Ga₂O₃ solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism, ACS Photonics 7, 812 (2020). Available operations: Cited by: On Google:

	76. Xue Zhao, Guangda Niu, Jinsong Zhu, Bo Yang, Jun-Hui Yuan, Shunran Li, Wanru Gao, Qingsong Hu, Lixiao Yin, Kan-Hao Xue, Efrat Lifshitz, Xiangshui Miao, and Jiang Tang*, All-Inorganic Copper Halide as a Stable and Self-Absorption-Free X-ray Scintillator, Journal of Physical Chemistry Letters 11, 1873 (2020). Available operations: Cited by: On Google:

	75. Li-Heng Li, Jun-Hui Yuan, Kan-Hao Xue, Meng Xu, Ming Xu, Jia-Fu Wang, and Xiang-Shui Miao, Synergic Effect in a New Electrocatalyst Ni₂SbTe₂ for Oxygen Reduction Reaction, Journal of Physical Chemistry C 124*, 3671 (2020). Available operations: Cited by: On Google:

	74. Luman Zhang, Luyao Song, Hongwei Dai, Jun-Hui Yuan, Mingshan Wang, Xinyu Huang, Lei Qiao, Hui Cheng, Xia Wang, Wei Ren, Xiangshui Miao, Lei Ye, Kan-Hao Xue, and Jun-Bo Han, Substrate-modulated ferromagnetism of two-dimensional Fe₃GeTe₂, Applied Physics Letters 116*, 042402 (2020). Available operations: Cited by: On Google:

	73. Wen-Yu Fang, Ping-An Li, Jun-Hui Yuan, Kan-Hao Xue*, and Jia-Fu Wang, Nb₂SiTe₄ and Nb₂GeTe₄: Unexplored 2D ternary layered tellurides with high stability, narrow band gap and high electron mobility, Journal of Electronic Materials 49, 959 (2020). Available operations: Cited by: On Google:

	72. Jejune Park, Kan-Hao Xue, Mireille Mouis, François Triozon, and Alessandro Cresti, Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder, Physical Review B 100*, 235403 (2019). Available operations: Cited by: On Google:

	71. Nian Duan, Yi Li, Hsiao-Cheng Chiang, Jia Chen, Wen-Qian Pan, Ya-Xiong Zhou, Yu-Chieh Chien, Yu-Hui He, Kan-Hao Xue, Gang Liu, Ting-Chang Chang, and Xiang-Shui Miao*, An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems, Nanoscale 11, 17590 (2019). Available operations: Cited by: On Google:

	70. Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao, Oxygen migration around the filament region in HfO_x memristors, AIP Advances 9, 105007 (2019). Available operations: Cited by: On Google: Copyright (2019) the authors, published by American Institute of Physics. This article is an OPEN ACCESS article and may be found at https://aip.scitation.org/doi/10.1063/1.5122989.

	69. Bo Yang, Lixiao Yin, Guangda Niu, Jun-Hui Yuan, Kan-Hao Xue, Zhifang Tan, Xiang-Shui Miao, Ming Niu, Xinyuan Du, Haisheng Song, Efrat Lifshitz, and Jiang Tang, Lead-free halide Rb₂CuBr₃ as sensitive X-ray scintillator, Advanced Materials 31, 1904711 (2019). Available operations: Cited by: On Google:

	68. Weicheng Pan, Bo Yang, Guangda Niu, Kan-Hao Xue, Xinyuan Du, Lixiao Yin, Muyi Zhang, Haodi Wu, Xiang-Shui Miao, and Jiang Tang, Hot-pressed CsPbBr₃ quasi-monocrystalline film for sensitive direct X-ray detection, Advanced Materials 31, 1904405 (2019). Available operations: Cited by: On Google:

	67. Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao, Self-compliance characteristics and switching degradation in TaO_x-based memristors, Applied Physics Express 12, 104003 (2019). Available operations: Cited by: On Google:

	66. Jinfeng Lin, Yang Zhou, Qiling Lu, Xiao Wu, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa, and Zhimei Sun, Reversible modulation of photoenergy in Sm-doped (K_0.5Na_0.5)NbO₃ transparent ceramics via photochromic behavior, Journal of Materials Chemistry A 7, 19374 (2019). Available operations: Cited by: On Google:

	65. Jun-Hui Yuan, Kan-Hao Xue, Qi Chen, Leonardo R. C. Fonseca, and Xiang-Shui Miao, Ab initio simulation of Ta₂O₅: A high symmetry ground state phase with application to interface calculation, Annalen der Physik 531*, 1800524 (2019). Available operations: Cited by: On Google:

	64. Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Kan-Hao Xue, Sheng Wang, Chen Lian, Zhao-Nan Li, Ming Xu, Xiao-Min Cheng, and Xiang-Shui Miao, Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge₂P₄S₂ and Ge₂As₄S₂, International Journal of Hydrogen Energy 44, 21536 (2019). Available operations: Cited by: On Google:

	63. Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao, Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap, Journal of Physical Chemistry Letters 10, 4455 (2019). Available operations: Cited by: On Google:

	62. Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao, BaAs₃: a narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles, Journal of Materials Science 54, 12676 (2019). Available operations: Cited by: On Google:

	61. Jinfeng Lin, Qiling Lu, Xiao Wu, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa, and Zhimei Sun, In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K_0.5Na_0.5NbO₃ laminar ceramic, Journal of Materials Chemistry C 7, 7885 (2019). Available operations: Cited by: On Google:

	60. Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfO_x memristors, IEEE Electron Device Letters 40, 1068 (2019). Available operations: Cited by: On Google:

	59. Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue, Ming Xu, Xiao-Min Cheng, and Xiang-Shui Miao, Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting, Journal of Materials Science 54, 11485 (2019). Available operations: Cited by: On Google:

	58. Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang, Heteroepitaxial passivation of Cs₂AgBiBr₆ wafers with suppressed ionic migration for X-ray imaging, Nature Communications 10, 1989 (2019). Available operations: Cited by: On Google:

	57. Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu, Composition-dependent ferroelectric properties in sputtered Hf_xZr_1-xO₂ thin films, IEEE Electron Device Letters 40, 570 (2019). Available operations: Cited by: On Google:

	56. Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao, Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility, Journal of Materials Science 54, 7035 (2019). Available operations: Cited by: On Google:

	55. Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao, TlP₅: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility, Journal of Materials Chemistry C 7, 639 (2019). Available operations: Cited by: On Google:

	54. Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao, KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism, Nanoscale 11, 1131 (2019). Available operations: Cited by: On Google:

	53. Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue, and Xiang-Shui Miao, Single-layer planar penta-X₂N₄ (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations, Applied Surface Science 469*, 456 (2019). Available operations: Cited by: On Google:

	52. B. Wang, K. H. Xue, H. J. Sun, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao, Performance enhancement of TaO_x resistive switching memory using graded oxygen content, Applied Physics Letters 113*, 183501 (2018). Available operations: Cited by: On Google:

	51. Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Theoretical investigation of the Ag filament morphology in conductive bridge random access memories, Journal of Applied Physics 124*, 152125 (2018). Available operations: Cited by: On Google: Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.

	50. Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao, GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides, Journal of Physics Communications 2, 105005 (2018). Available operations: Cited by: On Google: Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.

	49. Zhuo-Rui Wang, Yi Li, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue*, Simon M. Sze, and Xiang-Shui Miao, Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing, IEEE Transactions on Electron Devices 65, 4659 (2018). Available operations: Cited by: On Google:

	48. Kan-Hao Xue, Jun-Hui Yuan, Leonardo R.C. Fonseca, and Xiang-Shui Miao, Improved LDA-1/2 method for band structure calculations in covalent semiconductors, Computational Materials Science 153*, 493 (2018). Available operations: Cited by: On Google:

	47. Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, and Xiang-Shui Miao, Model of dielectric breakdown in hafnia-based ferroelectric capacitors, Journal of Applied Physics 124*, 024103 (2018). Available operations: Cited by: On Google:

	46. Ya-Xiong Zhou, Yi Li, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao, Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing, Advanced Electronic Materials 4, 1800229 (2018). Available operations: Cited by: On Google:

	45. Ke Lu, Yi Li, Wei-Fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao, Diverse spike-timing-dependent plasticity based on multilevel HfOx memristor for neuromorphic computing, Applied Physics A 124*, 438 (2018). Available operations: Cited by: On Google:

	44. Hao-Xuan Zheng, Ting-Chang Chang, Kan-Hao Xue, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze, Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory, IEEE Electron Device Letters 39, 815 (2018). Available operations: Cited by: On Google:

	43. Ming Xu, Zhenyu Lei, Junhui Yuan, Kanhao Xue, Yanrong Guo, Songyou Wang, Xiangshui Miao, and Riccardo Mazzarello, Structural disorder in the high-temperature cubic phase of GeTe, RSC Advances 8, 17435 (2018). Available operations: Cited by: On Google:

	42. Lin Lv, Zhishan Li, Kan-Hao Xue, Yunjun Ruan, Xiang Ao, Houzhao Wan, Xiangshui Miao, Baoshun Zhang, Jianjun Jiang, Chundong Wang, and Kostya Ostrikov, Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation, Nano Energy 47, 275 (2018). Available operations: Cited by: On Google:

	41. N. Liu, P. Yan, Y. Li, K. Lu, H. J. Sun, H. K. Ji, K. H. Xue, and X. S. Miao, Conducting mechanism of Ag-diffused Bi–Te based resistive switching devices, Applied Physics A 124*, 143 (2018). Available operations: Cited by: On Google:

	40. Junhui Yuan, Niannian Yu, Jiafu Wang, Kan-Hao Xue, and Xiangshui Miao, Design lateral heterostructure of monolayer ZrS₂ and HfS₂ from first principles calculations, Applied Surface Science 436*, 919 (2018). Available operations: Cited by: On Google:

	39. Kan-Hao Xue* and Xiang-Shui Miao, Oxygen vacancy chain and conductive filament formation in hafnia, Journal of Applied Physics 123*, 161505 (2018). Available operations: Cited by: On Google: Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue and Xiang-Shui Miao, Journal of Applied Physics 123, 161505 (2018), DOI: 10.1063/1.4989621) and may be found at http://aip.scitation.org/doi/10.1063/1.4989621.

	38. Ze-Han Wu, Kan-Hao Xue*, and Xiang-Shui Miao, Filament-to-dielectric band alignments in TiO₂ and HfO₂ resistive RAMs, Journal of Computational Electronics 16, 1057 (2017). Available operations: Cited by: On Google:

	37. Yi Li, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu, and Xiang-Shui Miao, Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO₂-based memristor, Applied Physics Letters 111*, 213505 (2017). Available operations: Cited by: On Google:

	36. Weifan He, Huajun Sun, Yaxiong Zhou, Ke Lu, Kanhao Xue*, and Xiangshui Miao, Customized binary and multi-level HfO_2-x-based memristors tuned by oxidation conditions, Scientific Reports 7, 10070 (2017). Available operations: Cited by: On Google:

	35. Kan-Hao Xue, Leonardo R. C. Fonseca, and Xiang-Shui Miao*, Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory, RSC Advances 7, 21856 (2017). Available operations: Cited by: On Google: Copyright (2017) the authors, published by the Royal Society of Chemistry. This article is an OPEN ACCESS article and may be found at http://pubs.rsc.org/en/content/articlelanding/2017/ra/c7ra01650f.

	34. Junhui Yuan, Niannian Yu, Kanhao Xue, and Xiangshui Miao, Stability, electronic and thermodynamic properties of aluminene from first-principles calculations, Applied Surface Science 409*, 85 (2017). Available operations: Cited by: On Google:

	33. Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao, Ideal strength and elastic instability in single-layer 8-Pmmn borophene, RSC Advances 7, 8654 (2017). Available operations: Cited by: On Google:

	32. Yi Li, Yaxiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Lei Jiang, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiangshui Miao*, Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar, ACS Applied Materials and Interfaces 8, 34559 (2016). Available operations: Cited by: On Google:

	31. Xue-Bing Yin, Rui Yang, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, and Xin Guo, Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices, Physical Chemistry Chemical Physics 18, 31796 (2016). Available operations: Cited by: On Google:

	30. H. Qian, H. Tong, L. J. Zhou, B. H. Yan, H. K. Ji, K. H. Xue*, X. M. Cheng, and X. S. Miao, Low work function of crystalline GeTe/Sb₂Te₃ superlattice-like films induced by the Te dangling bonds, Journal of Physics D 49, 495302 (2016). Available operations: Cited by: On Google:

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