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Peer-reviewed journal papers
 
     
  63. Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao,

Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap,

Journal of Physical Chemistry Letters 10, 4455 (2019).


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  62. Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

BaAs3: a narrow gap 2D semiconductor with vacancy-induced semiconductorĘCmetal transition from first principles,

Journal of Materials Science 54, 12676 (2019).


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  61. Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic,

Journal of Materials Chemistry C 7, 7885 (2019).


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  60. Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao,

Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors,

IEEE Electron Device Letters 40, 1068 (2019).


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  59. Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting,

Journal of Materials Science 54, 11485 (2019).


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  58. Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang*,

Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging,

Nature Communications 10, 1989 (2019).


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  57. Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu,

Composition-dependent ferroelectric properties in sputtered HfxZr1-xO2 thin films,

IEEE Electron Device Letters 40, 570 (2019).


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  56. Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility,

Journal of Materials Science 54, 7035 (2019).


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  55. Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao,

TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility,

Journal of Materials Chemistry C 7, 639 (2019).


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  54. Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism,

Nanoscale 11, 1131 (2019).


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  53. Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue*, and Xiang-Shui Miao,

Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations,

Applied Surface Science 469, 456 (2019).


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  52. B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao,

Performance enhancement of TaOx resistive switching memory using graded oxygen content,

Applied Physics Letters 113, 183501 (2018).


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  51. Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*,

Theoretical investigation of the Ag filament morphology in conductive bridge random access memories,

Journal of Applied Physics 124, 152125 (2018).


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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.
 
     
  50. Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides,

Journal of Physics Communications 2, 105005 (2018).


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Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.
 
     
  49. Zhuo-Rui Wang, Yi Li*, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue, Simon M. Sze, and Xiang-Shui Miao,

Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing,

IEEE Transactions on Electron Devices 65, 4659 (2018).


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  48. Kan-Hao Xue*, Jun-Hui Yuan, Leonardo R.C. Fonseca*, and Xiang-Shui Miao*,

Improved LDA-1/2 method for band structure calculations in covalent semiconductors,

Computational Materials Science 153, 493 (2018).


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  47. Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang, and Xiang-Shui Miao*,

Model of dielectric breakdown in hafnia-based ferroelectric capacitors,

Journal of Applied Physics 124, 024103 (2018).


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  46. Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao*,

Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing,

Advanced Electronic Materials 4, 1800229 (2018).


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  45. Ke Lu, Yi Li*, Wei-Fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao,

Diverse spike-timing-dependent plasticity based on multilevel HfOx memristor for neuromorphic computing,

Applied Physics A 124, 438 (2018).


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  44. Hao-Xuan Zheng, Ting-Chang Chang*, Kan-Hao Xue*, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze,

Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory,

IEEE Electron Device Letters 39, 815 (2018).


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  43. Ming Xu, Zhenyu Lei, Junhui Yuan, Kanhao Xue*, Yanrong Guo, Songyou Wang*, Xiangshui Miao, and Riccardo Mazzarello,

Structural disorder in the high-temperature cubic phase of GeTe,

RSC Advances 8, 17435 (2018).


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  42. Lin Lv, Zhishan Li, Kan-Hao Xue*, Yunjun Ruan, Xiang Ao, Houzhao Wan, Xiangshui Miao, Baoshun Zhang, Jianjun Jiang, Chundong Wang*, and Kostya Ostrikov,

Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation,

Nano Energy 47, 275 (2018).


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  41. N. Liu, P. Yan, Y. Li, K. Lu, H. J. Sun*, H. K. Ji, K. H. Xue, and X. S. Miao,

Conducting mechanism of Ag-diffused BiĘCTe based resistive switching devices,

Applied Physics A 124, 143 (2018).


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  40. Junhui Yuan, Niannian Yu, Jiafu Wang, Kan-Hao Xue*, and Xiangshui Miao,

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations,

Applied Surface Science 436, 919 (2018).


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  39. Kan-Hao Xue* and Xiang-Shui Miao*,

Oxygen vacancy chain and conductive filament formation in hafnia,

Journal of Applied Physics 123, 161505 (2018).


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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue and Xiang-Shui Miao, Journal of Applied Physics 123, 161505 (2018), DOI: 10.1063/1.4989621) and may be found at http://aip.scitation.org/doi/10.1063/1.4989621.
 
     
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