Total journal cites excluding self-citation:    Total cites on Google Scholar:   Pages: [1][2][3][4]  
 
Peer-reviewed journal papers
 
     
  51. Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*,

Theoretical investigation of the Ag filament morphology in conductive bridge random access memories,

Journal of Applied Physics 124, 152125 (2018).


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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.
 
     
  50. Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides,

Journal of Physics Communications 2, 105005 (2018).


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Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.
 
     
  49. Zhuo-Rui Wang, Yi Li*, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue, Simon M. Sze, and Xiang-Shui Miao,

Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing,

IEEE Transactions on Electron Devices 65, 4659 (2018).


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  48. Kan-Hao Xue*, Jun-Hui Yuan, Leonardo R.C. Fonseca*, and Xiang-Shui Miao*,

Improved LDA-1/2 method for band structure calculations in covalent semiconductors,

Computational Materials Science 153, 493 (2018).


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  47. Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang, and Xiang-Shui Miao*,

Model of dielectric breakdown in hafnia-based ferroelectric capacitors,

Journal of Applied Physics 124, 024103 (2018).


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  46. Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao*,

Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing,

Advanced Electronic Materials 4, 1800229 (2018).


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  45. Ke Lu, Yi Li*, Wei-Fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao,

Diverse spike-timing-dependent plasticity based on multilevel HfOx memristor for neuromorphic computing,

Applied Physics A 124, 438 (2018).


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  44. Hao-Xuan Zheng, Ting-Chang Chang*, Kan-Hao Xue*, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze,

Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory,

IEEE Electron Device Letters 39, 815 (2018).


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  43. Ming Xu, Zhenyu Lei, Junhui Yuan, Kanhao Xue*, Yanrong Guo, Songyou Wang*, Xiangshui Miao, and Riccardo Mazzarello,

Structural disorder in the high-temperature cubic phase of GeTe,

RSC Advances 8, 17435 (2018).


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  42. Lin Lv, Zhishan Li, Kan-Hao Xue*, Yunjun Ruan, Xiang Ao, Houzhao Wan, Xiangshui Miao, Baoshun Zhang, Jianjun Jiang, Chundong Wang*, and Kostya Ostrikov,

Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation,

Nano Energy 47, 275 (2018).


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  41. N. Liu, P. Yan, Y. Li, K. Lu, H. J. Sun*, H. K. Ji, K. H. Xue, and X. S. Miao,

Conducting mechanism of Ag-diffused Bi¨CTe based resistive switching devices,

Applied Physics A 124, 143 (2018).


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  40. Junhui Yuan, Niannian Yu, Jiafu Wang, Kan-Hao Xue*, and Xiangshui Miao,

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations,

Applied Surface Science 436, 919 (2018).


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  39. Kan-Hao Xue* and Xiang-Shui Miao*,

Oxygen vacancy chain and conductive filament formation in hafnia,

Journal of Applied Physics 123, 161505 (2018).


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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue and Xiang-Shui Miao, Journal of Applied Physics 123, 161505 (2018), DOI: 10.1063/1.4989621) and may be found at http://aip.scitation.org/doi/10.1063/1.4989621.
 
     
  38. Ze-Han Wu, Kan-Hao Xue*, and Xiang-Shui Miao,

Filament-to-dielectric band alignments in TiO2 and HfO2 resistive RAMs,

Journal of Computational Electronics 16, 1057 (2017).


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  37. Yi Li*, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long*, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu, and Xiang-Shui Miao*,

Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor,

Applied Physics Letters 111, 213505 (2017).


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  36. Weifan He, Huajun Sun*, Yaxiong Zhou, Ke Lu, Kanhao Xue, and Xiangshui Miao,

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions,

Scientific Reports 7, 10070 (2017).


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  35. Kan-Hao Xue, Leonardo R. C. Fonseca, and Xiang-Shui Miao*,

Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory,

RSC Advances 7, 21856 (2017).


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Copyright (2017) the authors, published by the Royal Society of Chemistry. This article is an OPEN ACCESS article and may be found at http://pubs.rsc.org/en/content/articlelanding/2017/ra/c7ra01650f.
 
     
  34. Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao,

Stability, electronic and thermodynamic properties of aluminene from first-principles calculations,

Applied Surface Science 409, 85 (2017).


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  33. Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao,

Ideal strength and elastic instability in single-layer 8-Pmmn borophene,

RSC Advances 7, 8654 (2017).


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  32. Yi Li, Yaxiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Lei Jiang, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiangshui Miao*,

Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar,

ACS Applied Materials and Interfaces 8, 34559 (2016).


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  31. Xue-Bing Yin, Rui Yang*, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, and Xin Guo*,

Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices,

Physical Chemistry Chemical Physics 18, 31796 (2016).


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  30. H. Qian, H. Tong*, L. J. Zhou, B. H. Yan, H. K. Ji, K. H. Xue, X. M. Cheng, and X. S. Miao,

Low work function of crystalline GeTe/Sb2Te3 superlattice-like films induced by the Te dangling bonds,

Journal of Physics D 49, 495302 (2016).


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  29. Vigneshwaran Thangavel, Kan-Hao Xue, Youcef Mammeri, Matias Quiroga, Afef Mastouri, Claude Gu¨Śry, Patrik Johansson, Mathieu Morcrette, and Alejandro A. Franco*,

A Microstructurally Resolved Model for Li-S Batteries Assessing the Impact of the Cathode Design on the Discharge Performance,

Journal of The Electrochemical Society 163, A2817 (2016).


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Copyright (2016) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/163/13/A2817.
 
     
  28. L. Jiang, L. Xu, J. W. Chen, P. Yan, K. H. Xue, H. J. Sun*, and X. S. Miao,

Conductance quantization in an AgInSbTe-based memristor at nanosecond scale,

Applied Physics Letters 109, 153506 (2016).


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  27. X. W. Guan, X. M. Cheng*, S. Wang, T. Huang, K. H. Xue, and X. S. Miao,

Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,

Journal of Electronic Materials 45, 3162 (2016).


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