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Peer-reviewed journal papers | Conference * Shell DFT-1/2 | Ferroelectrics |
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5.
Yichi Zhang#, Ye-Bin Dai#, Haiming Qin#, Hang Liu#, Zijian Zhou, Suman Xia, Hongjing Lai, Heng Xiang,
Chen Shen, Bowen Su, Dapeng Huang, Binbin Wu, Yeqing Zhu, Yujie Liu, Shufei Gu, Xueyan Zhang, Hao
Zhang*, Xinpeng Wang, Yu-Tao Li, Yi Tong*, Kan-Hao Xue*, Xiangshui Miao, Yi Yang, and Tian-Ling Ren*,
First-Principles-Augmented KAI Model Bridging Nucleation to Domain-Wall in Ferroelectric AlScN,
2025 IEEE International Electron Devices Meeting (IEDM), December 2025.
DOI: 10.1109/IEDM50572.2025.11353565
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4.
Zhao-Yi Yan#, Ruiting Zhao#, Zhenze Wang, Tian Lu, Houfang Liu*, Kan-Hao Xue, Xiangshui Miao, Yi Yang*, and Tian-Ling Ren*,
A Liouville Model for Polycrystalline Ferroelectrics Emphasizing Kinetic Integrity and Deployability in Circuits with Charge and Current Constraints,
2023 IEEE International Electron Devices Meeting (IEDM), December 2023.
DOI: 10.1109/IEDM45741.2023.10413752
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3.
Y. Ding, J. Yang, Y. Liu, J. Gao, Y. Wang, P. Jiang, S. Lv, Y. Chen, B. Wang, W. Wei, T. Gong, K.-H. Xue*, Q. Luo*, X. Miao, and M. Liu,
16-Layer 3D Vertical RRAM with Low Read Latency (18 ns), High Nonlinearity (>5000) and Ultra-Low Leakage Current (~pA) Self-Selective Cells,
2023 IEEE Symposium on VLSI Technology, T9-3, June 2023.
DOI: 10.23919/VLSITechnologyandCir57934.2023.10185341
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2.
Y. Zheng, Y. Zheng, Z. Gao, J. Yuan, Y. Cheng*, Q. Zhong, T. Xin, Y. Wang, C. Liu, Y. Huang, R. Huang, X. Miao, K. Xue*, and H. Lyu*,
Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation,
67th IEEE International Electron Devices Meeting (IEDM), December 2021.
DOI: 10.1109/IEDM19574.2021.9720565
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1.
Qing Luo, Jie Yu, Xumeng Zhang, Kan-Hao Xue, Yan Cheng, Tiancheng Gong, Hangbing Lv*, Xiaoxin Xu, Peng Yuan, Jiahao Yin, Lu Tai, Shibing Long, Qi Liu, Jing Li, Ming Liu*,
Nb1-xO2 based universal selector with ultra-high endurance (>1012), high speed (10ns) and excellent Vth stability,
2019 IEEE Symposium on VLSI Technology, T236-T237, June 2019.
DOI: 10.23919/VLSIT.2019.8776546
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