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Peer-reviewed journal papers | Conference   *   Shell DFT-1/2 | Ferroelectrics
 
     
  6. (2009b) TianLing Ren*, MingMing Zhang, Ze Jia, LinKai Wang, ChaoGang Wei, KanHao Xue, YingJie Zhang, Hong Hu, Dan Xie, and LiTian Liu,

Model and key fabrication technologies for FeRAM,

ECS Transactions 22, 217 (2009).


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  5. (2009a) Dan Xie*, Wenkao Yu, Yafeng Luo, Kanhao Xue, Tianling Ren, and Litian Liu,

Etching behavior and damage rejuvenation of top electrode and Bi3.15Nd0.85Ti3O12 films applied in ferroelectric random access memory devices,

Japanese Journal of Applied Physics 48, 050209 (2009).


Impact Factor: 1.491

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  4. (2008b) Xin-Yi Wen*, Jun Yu, Tian-Ling Ren, Kan-Hao Xue, Wen-Li Zhou, and Yun-Bo Wang,

Studies on the fatigue behavior of ferroelectric film using Preisach approach,

Integrated Ferroelectrics 99, 3 (2008).


Impact Factor: 0.836

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  3. (2008a) Kan-Hao Xue, Tian-Ling Ren*, Dan Xie, Ze Jia, Ming-Ming Zhang, and Li-Tian Liu,

Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application,

Integrated Ferroelectrics 96, 19 (2008).


Impact Factor: 0.836

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  2. (2007) Kan-Hao Xue, Tian-Ling Ren*, Tian-Zhi Liu, Dan Xie, Ze Jia, and Li-Tian Liu,

Investigation on annealing and etching effects for Pt/Bi3.15Nd0.85Ti3O12/Pt ferroelectric capacitors,

Japanese Journal of Applied Physics 46, 4200 (2007).


Impact Factor: 1.491

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  1. (2006) Kan-Hao Xue*, Zhi-Gang Zhang, Dan Xie, Chao-Gang Wei, Tian-Zhi Liu, Tian-Ling Ren, and Li-Tian Liu,

Studies on the relax behavior of SrBi2Ta2O9 thin films,

Integrated Ferroelectrics 79, 81 (2006).


Impact Factor: 0.836

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